Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
Identifieur interne : 000396 ( Chine/Analysis ); précédent : 000395; suivant : 000397Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
Auteurs : RBID : Pascal:12-0100005Descripteurs français
- Pascal (Inist)
- Réflexion multiple, Composé III-V, Semiconducteur III-V, Nanofil, Nanomatériau, Jonction Josephson, Nanoélectronique, Information quantique, Traitement information, Jonction supraconductrice, Electrode commande, Tension polarisation, Dépendance température, Champ température, Antimoniure d'indium, Supraconducteur, Aluminium, Tellurure de gallium, Supraconductivité, InSb, 8107V, 8107B, 8535, 0367.
- Wicri :
- concept : Aluminium.
English descriptors
- KwdEn :
- Aluminium, Bias voltage, Gallium tellurides, Gates, III-V compound, III-V semiconductors, Indium antimonides, Information processing, Josephson junctions, Multiple reflections, Nanoelectronics, Nanostructured materials, Nanowires, Quantum information, Superconducting junctions, Superconductivity, Superconductors, Temperature dependence, Temperature distribution.
Abstract
Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire-based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid-state systems.
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Pascal:12-0100005Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction</title><author><name sortKey="Nilsson, H A" uniqKey="Nilsson H">H. A. Nilsson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Division of Solid State Physics and, Lund University, P.O. Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Samuelsson, P" uniqKey="Samuelsson P">P. Samuelsson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Mathematical Physics, Lund University, P.O. Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>2 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Caroff, P" uniqKey="Caroff P">P. Caroff</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>I.E.M.N., UMR CNRS 8520, Avenue Poincaré, BP 60069</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Xu, H Q" uniqKey="Xu H">H. Q. Xu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Division of Solid State Physics and, Lund University, P.O. Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0100005</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0100005 INIST</idno><idno type="RBID">Pascal:12-0100005</idno><idno type="wicri:Area/Main/Corpus">002165</idno><idno type="wicri:Area/Main/Repository">001470</idno><idno type="wicri:Area/Chine/Extraction">000396</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Bias voltage</term><term>Gallium tellurides</term><term>Gates</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Information processing</term><term>Josephson junctions</term><term>Multiple reflections</term><term>Nanoelectronics</term><term>Nanostructured materials</term><term>Nanowires</term><term>Quantum information</term><term>Superconducting junctions</term><term>Superconductivity</term><term>Superconductors</term><term>Temperature dependence</term><term>Temperature distribution</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Réflexion multiple</term><term>Composé III-V</term><term>Semiconducteur III-V</term><term>Nanofil</term><term>Nanomatériau</term><term>Jonction Josephson</term><term>Nanoélectronique</term><term>Information quantique</term><term>Traitement information</term><term>Jonction supraconductrice</term><term>Electrode commande</term><term>Tension polarisation</term><term>Dépendance température</term><term>Champ température</term><term>Antimoniure d'indium</term><term>Supraconducteur</term><term>Aluminium</term><term>Tellurure de gallium</term><term>Supraconductivité</term><term>InSb</term><term>8107V</term><term>8107B</term><term>8535</term><term>0367</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire-based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid-state systems.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>12</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction</s1></fA08><fA11 i1="01" i2="1"><s1>NILSSON (H. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SAMUELSSON (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>CAROFF (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>XU (H. Q.)</s1></fA11><fA14 i1="01"><s1>Division of Solid State Physics and, Lund University, P.O. Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Division of Mathematical Physics, Lund University, P.O. Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>I.E.M.N., UMR CNRS 8520, Avenue Poincaré, BP 60069</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>4 aut.</sZ></fA14><fA20><s1>228-233</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000506742750400</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>53 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0100005</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. 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